硅外延/蓝宝石外延SOS/GaAs外延/Inp外延/GaN外延
来源:
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作者:北京特博文宣部
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发布时间: 2009-02-19
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8700 次浏览
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Type
| Substrates
| Display
| Desciption
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Si Epi
| Si
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| size
| 3-8”
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Type
| P/P++, N/N++, N/N+, N/N+/N++, N/P/P, P/N/N+
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Epi Resistivity (Ω*cm)
| 0.001-1500
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Homogeneity
| <6%
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Epi Thickness ( µm)
| 0.1-200
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Homogeneity
| <10%
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R-Sapphire
(SOS)
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| size
| EPI Thickness (um)
| EPI Res.(ohm.cm)
|
150 mm (6”)
| 0.3
| >30
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100 mm (4”)
| 0.3,0.6
| >30
| 5-30
| 2.5-10
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76 mm (3”)
| 0.6-5
| 0.003-0.025
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GaN/SiC Epi
| C-Sapphire
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| EPI Type
| N型(掺Si)、P型(掺Mg)、不掺杂
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Standard size
| 2”
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Sapphire Thickness (um)
| 430
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EPI Thickness (um)
| 3-9um
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Si/SiC
| 4-6” GaN Epi on Si /SiC
4-6” SiC Epi on SiC
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LED/LD Epi
| GaAs
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| 2", 2 um AlInP EPI layer on GaAs substrate
| 典型波长:
792nm、808nm、825nm、880nm、915nm、940nm、976nm、980nm、1060nm、1550nm。可制作2W和4W器件。
可以提供LED级别的,2寸红光,蓝光,绿光外延片。拥有MBE、MOCVD工艺,按客户要求定制苛刻要求的各种GaAs基,InP基,Si基等复杂结构的外延。
可提供PL、X-ray、ECV检测报告。
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2" AlGaAs on GaAs(N-type i-doped) substrate EPI: Al(x)Ga(1-x)As, x=0.15
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3" structure is from bottom to top GaAs(100)~200nm In0.5Ga0.5P~1400nm GaAs~320nmAI0.2Ga0.8As~30nmGaAs
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InP
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| 2" /InP/ undoped
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2", 2 um InGaAs EPI layer on InP substrate
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InP / 1.8 micron / undoped
In(0.53)Ga(0.47)As/300 nm / p-type 1e18 cm-3
InP substrate / 350 micron / undoped
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