For 4”(100mm）, 5”（125mm）, 6”（150mm）
—— Handle wafer minimum 300um maximum 1000um
—— Buried Oxide, minimum 0.1 um, maximum 4 um
—— Device layer minimum 2 um, max 500 um.（几十至几百纳米for6英寸）

 For 8"（200mm）
—— Handle thickness minimum 500um and maximum 675um,
—— Buried Oxide minimum 0.1 um, maximum 4 um
—— Device layer minimum 5 um, maximum 500 um（几十至几百纳米）

2-    Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片
      100mm, 125mm, 150mm and 200mm, thickness as specified above.

3-    Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
      Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)   and finally Through Silicon Via (TSV)   
—— Cavity SOI- Bonded SOI or Silicon DWB wafers with cavities performed within the wafer
—— Multiple SOI 2 or 3 or more layers of SOI designed around your process
—— Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated

4-     SOI + Trench & Refill  Features
a.  Significant die shrink compared to conventional dielectric isolation(DI) or junction isolation 
b.  Bulk quality top silicon layer 
c.  Total device-to-device isolation 
d.  Lower substrate capacitance than bulk 
e.  Fully flexible specification on SOI, Trench and refill parameters

5-   Superjunction MOSFET

Parameter Parameter

Specification Range

Wafer Diameter

100, 125, 150 mm

200 mm

Handle Layer Specifications

Handle Thickness

200–1000 µm

500-750 µm

Handle Thickness Tolerance

±5 µm

Stack Thickness

≥280 – ≤1250 µm

Dopant Type

N or P

Doping

N type: Phos, Red Phos, Sb & As
P type: Boron

Resistivity

≤0.001 – ≥10000 Ω-cm

Growth Method

CZ, MCZ or FZ

Crystal Orientation

<100>, <111> or <110>

Backside Finish

Lapped/Etched or Polished

Buried Oxide Specifications

Thermally Oxidised Buried Oxide Thickness

0.2 – 5.0 µm grown on Handle, Device or both wafers

Device Layer Specifications

Device Layer Thickness

≥1.5 µm

5-300 µm

Tolerance

± 0.5 µm

±0.8 µm

Dopant Type

N or P

Doping

N type: Phos, Red Phos, Sb & As
P type: Boron

Resistivity

≤0.001 – ≥10000 Ω-cm

Growth Method

CZ, MCZ or FZ

Crystal Orientation

<100>, <111> or <110>

Buried Layer Implant

N type or P type

SOI应用优势

SOI高速特性

微处理器，高速通信，三维图象处理，先进多媒体

SOI低压低功耗特点

移动计算机，移动电话，便携式电子设备，射频集成灵巧功率器件以及其它要求功耗低、散热快的领域，如单芯片系统SOC，微小卫星等

SOI应用于恶劣环境

高温器件，高压器件，卫星或其它空间应用，武器控制系统等

SOI光通信和MEMS应用

作为一种结构材料，可制作硅基集成光电器件，应用于高速宽带互联网和其它光网络的接口。此外，SOI圆片还广泛应用于制作微机电系统(MEMS)器件，如传感器