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砷化镓衬底GaAs wafer

  

   

北京特博万德科技有限公司专业生产定制高质量砷化镓衬底片GaAs wafer、多晶棒。尺寸 2"     3"    4"      6"  , 晶向(100)(111),类型:N- type 掺Si, P- type 掺Zn,半绝缘Undope 。

-------   我司专业提供“激光领域” 用高质量 110um厚双抛GaAs      ------

---------更可以提供EPD<500  、 <300  、<100、<50 的高质量LD级外延用GaAs ------

 

常规产品规格请参考下表

Parameter

Guaranteed / Actual Values

UOM

Growth Method:

VGF

 

Conduct Type:

S-I-N

 

Dopant:

Undoped

 

Diameter:

50.7± 0.1

mm

Orientation:

(100)± 0.50

 

OF location/length:

EJ [ 0-1-1]± 0.50/16±1

 

IF location/length:

EJ [ 0-1 1 ]± 0.50/7±1

 

Resistivity:

Min: 1.0 E8

Max: 2.2 E8

Ω·cm

Mobility:

Min: 4500

Max: 5482

cm2/v.s

EPD:

Min: 700

Max: 800

/ cm2

Thickness:

350± 20

µm

Edge Rounding:

0.25

mmR

Laser Marking:

N/A

 

TTV/TIR:

Max: 10

µm

BOW:

Max: 10

µm

Warp:

Max: 10

µm

Partical  Count:

50/wafer(for particle>0.3um)

 

Surface Finish– front:

Polished  

 

Surface Finish –back:

Etched

 

Epi-Ready:

Yes

 

 

Parameter

Guaranteed / Actual Values

UOM

Growth Method:

VGF

 

Conduct Type:

S-I-N

 

Dopant:

Undoped

 

Diameter:

76.2± 0.2

mm

Orientation:

(100) 00± 0.50

 

OF location/length:

EJ [ 0-1-1]± 0.50/22±2

 

IF location/length:

EJ [ 0-1 1 ]± 0.50/11±2

 

Resistivity:

Min: 1E8

Max: 1.03E8

Ω·cm

Mobility:

Min: 5613

Max: 6000

cm2/v.s

EPD:

Min: 700

Max: 800

Max:

Thickness:

625±20

µm

Edge Rounding:

0.375

mmR

Laser Marking:

N/A

 

TTV:

N/A

µm

Surface Finish– front:

Polished  

 

Surface Finish –back:

Etched

 

Epi-Ready:

Yes

 

 

 

 

Parameter

Guaranteed / Actual Values

UOM

Growth Method:

VGF

 

Conduct Type:

S-I-N

 

Dopant:

Undoped

 

Diameter:

100.0± 0.2

mm

Orientation:

(100)± 0.30

 

OF location/length:

EJ [ 0-1-1]± 0.50/32.5±1

 

IF location/length:

EJ [ 0-1 1 ]± 0.50/18±1

 

Resistivity:

Min: 1.5 E8

Max: 2.0 E8

Ω·cm

Mobility:

Min: 4832

Max: 4979

cm2/v.s

EPD:

Min: 600

Max: 700

/ cm2

Thickness:

625± 25

µm

Edge Rounding:

0.375

mmR

TTV/TIR:

Max: 3

µm

BOW:

Max: 4

µm

Warp:

Max: 5

µm

Partical  Count:

100/wafer(for particle>0.3um)

 

Surface Finish– front:

Polished  

 

Surface Finish –back:

Polished

 

Epi-Ready:

Yes

 

 

Parameter

Customer’s Requirements

Guaranteed / Actual Values

UOM

Growth Method:

VGF

VGF

 

Conduct Type:

S-C-P

S-C-P

 

Dopant:

GaAs-Zn

GaAs-Zn

 

Diameter:

50.8± 0.4

50.8± 0.4

mm

Orientation:

(100)± 0.50

(100)± 0.50

 

OF location/length:

EJ [ 0-1-1]± 0.50/16±1

EJ [ 0-1-1]± 0.50/16±1

 

IF location/length:

EJ [ 0-1 1 ]± 0.50/7±1

EJ [ 0-1 1 ]± 0.50/7±1

 

Ingot CC:

Min: 1 E19

Max: 5 E19

Min: 1.4 E19

Max: 1.9 E19

/cm3

Resistivity:

Min: N/A

Max: N/A

Min: N/A

Max: N/A

Ω·cm

Mobility:

Min: N/A

Max: N/A

Min: N/A

Max: N/A

cm2/v.s

EPD:

Max: 5000

Min: 600

Max: 700

/ cm2

Thickness:

350±25

350±25

µm

Surface Finish– front:

Polished  

Polished  

 

Surface Finish –back:

Etched

Etched

 

Epi-Ready:

Yes

Yes

 

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